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IEC TR 62240 (Technical Report, first edition, 2005) provides guidance on the process management for avionics concerning the use of semiconductor devices outside manufacturers’ specified temperature range. This technical report addresses a critical challenge faced by avionics designers: semiconductor components qualified for commercial (0 °C to +70 °C) or industrial (-40 °C to +85 °C) temperature ranges must often operate in avionics environments that expose them to -55 °C to +125 °C or beyond.
The technical report applies to all categories of semiconductor devices used in avionics systems, including microprocessors, memory devices, FPGAs, linear and mixed-signal ICs, power devices, and discrete semiconductors. It covers both hermetically sealed and plastic-encapsulated packages, although the guidance differs significantly between these two packaging technologies due to their different failure mechanisms at temperature extremes.
| Temperature Class | Standard Range | Extended Avionics Range | Key Risk Factors |
|---|---|---|---|
| Commercial | 0 °C to +70 °C | -55 °C to +125 °C | Electromigration, hot carrier injection, latch-up |
| Industrial | -40 °C to +85 °C | -55 °C to +125 °C | Parameter drift, solder joint fatigue |
| Automotive | -40 °C to +125 °C | -55 °C to +150 °C | Package stress, wire bond fatigue |
| Military (883) | -55 °C to +125 °C | Within spec (no extension needed) | N/A (qualified for full range) |
IEC TR 62240 outlines a structured qualification process that must be followed when a semiconductor device is to be used beyond its rated temperature range. The methodology consists of three phases:
Phase 1 — Characterisation: The user must characterise the device’s electrical parameters across the extended temperature range. Critical parameters include propagation delays, output drive strength, input threshold voltages, leakage currents (particularly important at high temperature), and supply current. Characterisation must be performed on a statistically significant sample (typically 25-50 devices from at least 3 different manufacturing lots) to capture process variation.
Phase 2 — Reliability Assessment: Accelerated life testing is used to estimate the device failure rate at the extended temperature conditions. The report recommends using the Arrhenius model with an activation energy (Ea) of 0.7 eV for most silicon-based failure mechanisms. The acceleration factor between the rated maximum temperature and the extended temperature is calculated, and the required test duration at elevated temperature is determined to demonstrate the equivalent of the target service life.
| Failure Mechanism | Typical Activation Energy (eV) | Acceleration from 85 °C to 125 °C |
|---|---|---|
| Electromigration | 0.5 – 0.7 | 8x – 20x |
| Time-dependent dielectric breakdown (TDDB) | 0.6 – 1.0 | 12x – 50x |
| Hot carrier injection | -0.2 to -0.4 (inverse) | N/A (worse at low temperature) |
| Negative bias temperature instability (NBTI) | 0.3 – 0.5 | 4x – 8x |
| Moisture/contamination (plastic packages) | 0.8 – 1.1 | 24x – 60x |
Phase 3 — Application-Specific Verification: The device must be tested in the actual system configuration under extended temperature conditions. This includes functional testing, timing margin analysis, and power consumption measurement at both temperature extremes. Special attention must be paid to start-up behaviour at low temperature (-55 °C) where oscillator circuits may fail to start and power supply sequencing may be affected by changed threshold voltages.
1. Hot Carrier Injection at Low Temperature: Counterintuitively, hot carrier injection (HCI) degradation is worse at low temperatures than at high temperatures. At -55 °C, carrier mobility is higher and mean free path is longer, resulting in more energetic carriers that can damage the gate oxide. Designers extending device operation to -55 °C must evaluate HCI lifetime using appropriate acceleration models that account for the inverse temperature dependence.
2. Plastic Encapsulation Considerations: Plastic-encapsulated devices (non-hermetic) present unique challenges at temperature extremes. At high temperature, moisture trapped in the plastic moulding compound expands and can cause “popcorning” or delamination. At low temperature, the thermal expansion mismatch between the silicon die and the plastic package increases, potentially causing passivation cracking or wire bond stress. The report recommends moisture sensitivity level (MSL) preconditioning and acoustic microscopy inspection for plastic devices used in extended-range applications.
3. Derating of Absolute Maximum Ratings (AMR): When operating a device outside the manufacturer’s specified temperature range, all other absolute maximum ratings (voltage, current, power dissipation) must be derated. As a rule of thumb, for every 10 °C above the maximum rated temperature, the maximum allowable junction temperature should be reduced by 5 °C through reduced power dissipation. This derating ensures that the device does not simultaneously operate at extended temperature AND maximum electrical stress, which would dramatically accelerate failure.