IEC 60119: Semiconductor Device Characteristics — Test Methods from Germanium to SiC

Semiconductor Device Characteristics — Test Methods From Germanium to Silicon Carbide

IEC 60119 specifies semiconductor device characteristic measurement methods. While specific parameters vary by device type, fundamental measurement methods for V_F, V_BR, I_R were all established within this standard framework — junction temperature control, pulse width limitation (avoiding self-heating), and four-wire Kelvin connections included.